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Preliminary Technical Information
HiperFET TM
Power MOSFETs
Q3-Class
IXFT44N50Q3
IXFH44N50Q3
V DSS
I D25
R DS(on)
t rr
= 500V
= 44A
≤ 140m Ω
≤ 250ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-268 (IXFT)
G
S
Symbol
Test Conditions
Maximum Ratings
D (Tab)
V DSS
V DGR
V GSS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
500
500
± 30
± 40
V
V
V
V
TO-247 (IXFH)
I D25
I DM
I A
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
44
130
44
A
A
A
G
D
S
D (Tab)
E AS
dv/dt
P D
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150°C
T C = 25 ° C
1.5
50
830
J
V/ns
W
G = Gate
S = Source
D = Drain
Tab = Drain
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
Features
Low Intrinsic Gate Resistance
T L
T sold
M d
Weight
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268
TO-247
300
260
1.13 / 10
4.0
6.0
° C
° C
Nm/lb.in.
g
g
International Standard Packages
Low Package Inductance
Avalanche Rated
Fast Intrinsic Rectifier
Low R DS(on) and Q G
Advantages
High Power Density
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Easy to Mount
Space Savings
BV DSS
V GS(th)
I GSS
V GS = 0V, I D = 1mA
V DS = V GS , I D = 4mA
V GS = ± 30V, V DS = 0V
500
3.5
6.5
± 100
V
V
nA
Applications
DC-DC Converters
Battery Chargers
I DSS
R DS(on)
V DS = V DSS , V GS = 0V
T J = 125 ° C
V GS = 10V, I D = 0.5 ? I D25 , Note 1
25 μ A
1 mA
140 m Ω
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
? 2012 IXYS CORPORATION, All Rights Reserved
DS100381A(05/12)
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